Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode
Current spreading in GaN-based light-emitting diodes
Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes | Scientific Reports
Nanomaterials | Free Full-Text | Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing | HTML
Current spreading in GaN-based light-emitting diodes
Nanomaterials | Free Full-Text | Electrical and Optical Properties of a Transparent Conductive ITO/Ga2O3/Ag/Ga2O3 Multilayer for Ultraviolet Light-Emitting Diodes | HTML
HOT SPUTTERED ITO - A NEW PROCESS FOR LED
The establishment of micro UV-LED chip company for micro LED display. / NITRIDE SEMICONDUCTORS Co.,Ltd.
Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode
a) Schematic of an LED structure with a patterned ITO contact layer.... | Download Scientific Diagram
Artificially formed resistive ITO/p-GaN junction to suppress the current spreading and decrease the surface recombination for GaN-based micro-light emitting diodes
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Schematic diagrams of the fabrication process of GaN-based LED... | Download Scientific Diagram
a) Current–voltage and light output power–current characteristics of... | Download Scientific Diagram
Schematic diagrams of the studied devices (Reference LED without ITO... | Download Scientific Diagram
External quantum efficiencies of the ITO and ZnO=ITO LEDs as functions... | Download Scientific Diagram
Sputter deposition of Sn-doped ZnO/Ag/Sn-doped ZnO transparent contact layer for GaN LED applications - ScienceDirect
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